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2PC4617QMB

Marking：00001111；Package：SOT883B；50 V, 100 mA NPN general-purpose transistors

Generaldescription NPNgeneral-purposetransistorsinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■PowerdissipationcomparabletoSOT23 ■Lowpackageheightof0.37mm ■AEC

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2PC4617QMB

Marking：00001111；Package：DFN1006B-3；50 V, 100 mA NPN general-purpose transistors

Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5230QA

Marking：000010；Package：DFN1010D-3；30 V, 2 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4230QA. 2.Featuresandbenefits ?Verylowcollector-

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PDTB113EQA

Marking：000001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

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安世安世半導(dǎo)體(中國(guó))有限公司

PDTB113EQA

Marking：000001；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

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PMEG2010BELD

Marking：00001001；Package：DFN1006D-2；20 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aleadlessultrasmallDFN1006D-2(SOD882D)Surface-MountedDevice(SMD)plasticpackage withvisibleandsolderablesidepads. 2.Featuresandbenefits ?Averagefo

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BSS84AKMB

Marking：00000010；Package：DFN1006B-3；50 V, single P-channel Trench MOSFET

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PBHV8515QA

Marking：000011；Package：DFN1010D-3；150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTB113EQA

Marking：000001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMZB290UN

Marking：00000101；Package：DFN1006B-3；20 V, single N-channel Trench MOSFET

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詳細(xì)參數(shù)

  • 型號(hào)：

    0000

  • 制造商：

    PanaVise

  • 功能描述：

    VACUUM BASE #380 PANAVISE

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更多0000供應(yīng)商 更新時(shí)間2025-6-8 11:02:00

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