絲印下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

00001111

型號(hào):2PC4617QMB;Package:SOT883B;50 V, 100 mA NPN general-purpose transistors

Generaldescription NPNgeneral-purposetransistorsinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■PowerdissipationcomparabletoSOT23 ■Lowpackageheightof0.37mm ■AEC

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

00001111

型號(hào):2PC4617QMB;Package:DFN1006B-3;50 V, 100 mA NPN general-purpose transistors

Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

000010

型號(hào):PBSS5230QA;Package:DFN1010D-3;30 V, 2 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4230QA. 2.Featuresandbenefits ?Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

000001

型號(hào):PDTB113EQA;Package:DFN1010D-3;50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

000001

型號(hào):PDTB113EQA;Package:SOT1215;50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

00001001

型號(hào):PMEG2010BELD;Package:DFN1006D-2;20 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aleadlessultrasmallDFN1006D-2(SOD882D)Surface-MountedDevice(SMD)plasticpackage withvisibleandsolderablesidepads. 2.Featuresandbenefits ?Averagefo

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

00000010

型號(hào):BSS84AKMB;Package:DFN1006B-3;50 V, single P-channel Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

000011

型號(hào):PBHV8515QA;Package:DFN1010D-3;150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

000001

型號(hào):PDTB113EQA;Package:DFN1010D-3;50 V, 500 mA PNP resistor-equipped transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

00000101

型號(hào):PMZB290UN;Package:DFN1006B-3;20 V, single N-channel Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    0000

  • 功能描述:

    MOSFET N-Chan 60V 450mA

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
恩XP
24+
標(biāo)準(zhǔn)封裝
26367
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
詢價(jià)
恩XP
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
Nexperia/安世
22+
SOT883B
200000
原廠原裝正品現(xiàn)貨
詢價(jià)
NEXPERIA/安世
24+
SOD883
900000
原裝進(jìn)口特價(jià)
詢價(jià)
恩XP
2022+
200
全新原裝 貨期兩周
詢價(jià)
恩XP
24+
DFN
35200
一級(jí)代理分銷/放心采購(gòu)
詢價(jià)
恩XP
2447
DFN
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
恩XP
24+
SMD8
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
NEXPERIA/安世
23+
SOT883B
6000
原裝正品假一罰百!可開增票!
詢價(jià)
恩XP
23+
SOT883
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
更多0000供應(yīng)商 更新時(shí)間2025-7-28 23:00:00