PESD24VS1ULD

Marking：0010；Package：SOD882D；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PESD24VS1ULD-Q

Marking：0010；Package：DFN1006D-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PMEG2005BELD-Q

Marking：0010；Package：DFN1006D-2；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaleadlessultrasmallSOD882D(DFN1006D-2) Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidep

PMEG4005EPK

Marking：0010；Package：DFN1608D-2；40 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaleadlessultrasmallSOD1608(DFN1608D-2) Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidep

BC847AQA

Marking：001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits ?General-purposetransistors ?Threecurrentgainselections ?Lowpackageheightof0.37mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?AEC-Q101qualified

BC847BQA

Marking：001011；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits ?General-purposetransistors ?Threecurrentgainselections ?Lowpackageheightof0.37mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?AEC-Q101qualified

PBSS5130QA

Marking：001010；Package：DFN1010D-3；30 V, 1 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4130QA. 2.Featuresandbenefits ?Verylowcollector-

PDTA123EMB

Marking：00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC123EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTA124EMB

Marking：00100101；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC124EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTA143EMB

Marking：00100111；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■