| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking：000101；Package：DFN1010B-6；60 V, dual N-channel Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：00010111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓 Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123JMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■ | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：00010101；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓 Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：00010110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓 Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143ZMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：00010111；Package：SOT8001；30 V, N-channel Trench MOSFET description N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Features ?Lowthresholdvoltage ?Veryfastswitching ?TrenchMOSFETtechnology ?ElectroStatic | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA |
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