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2N7002BKMB

Marking：0000；Package：SOT883B；60 V, single N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits ?Veryfastswitching ?TrenchMOSFETtechnology ?ESDprote

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安世安世半導(dǎo)體(中國)有限公司

NX3008NBKMB

Marking：0000；Package：SOT883B；30 V, single N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006B-3 (SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Veryfastswitching ?Lowthresholdvoltage ?TrenchMOSFETt

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NX3008PBKMB

Marking：0000；Package：SOT883B；30 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits ?Veryfastswitching ?Lowthresholdvoltage ?TrenchMOSFE

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD5V0X1UALD

Marking：0000；Package：SOD882D；Ultra low capacitance unidirectional ESD protection diode

1.1Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiode designedtoprotectonesignallinefromthedamagecausedbyESDandothertransients. ThedeviceishousedinaSOD882DleadlessultrasmallSurface-MountedDevice(SMD) plasticpackag

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD5V0X1UALD-Q

Marking：0000；Package：DFN1006D-2；Ultra low capacitance unidirectional ESD protection diode

1.Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiode,designedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackage

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG2010BELD-Q

Marking：0000；Package：DFN1006D-2；20 V, 1 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaleadlessultrasmallDFN1006D-2(SOD882D) Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidep

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMZB290UNE

Marking：0000；Package：SOT883B；20 V, single N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits ?Veryfastswitching ?Lowthresholdvoltage ?TrenchMOSFE

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMZB670UPE

Marking：0000；Package：SOT883B；20 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits ?Veryfastswitching ?Lowthresholdvoltage ?TrenchMOSFE

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

2PA1774RMB

Marking：00001101；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors

Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

2PA1774SMB

Marking：00001110；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors

Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    0000

  • 制造商：

    PanaVise

  • 功能描述：

    VACUUM BASE #380 PANAVISE

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更多0000供應(yīng)商 更新時(shí)間2025-6-6 16:34:00

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