| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：000010；Package：DFN1010D-3；30 V, 2 A PNP low VCEsat (BISS) transistor 1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4230QA. 2.Featuresandbenefits ?Verylowcollector- | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
Marking：00001001；Package：DFN1006D-2；20 V, 1 A low VF Schottky barrier rectifier 1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aleadlessultrasmallDFN1006D-2(SOD882D)Surface-MountedDevice(SMD)plasticpackage withvisibleandsolderablesidepads. 2.Featuresandbenefits ?Averagefo | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
Marking：00001000；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
Marking：00001001；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
Marking：00001010；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA |
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