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TPUT3N06G-AE3-R

Marking:S10;Package:SOT23;60V N-Channel MOSFET

Application Load/PowerSwitching InterfacingSwitching BatteryManagementforUltraSmallPortable LogicLevelShift

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

TRS10E65H

Marking:S10E65H;Package:TO-220-2L;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.2V(typ.) (3)Lowtotalcapacitivecharge:Qc=27nC(typ.) (4)Lowreversecurrent:IR=2.0μA(typ.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TRS10H120H

Marking:S10H120H;Package:TO-247-2L;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc=61nC(typ.) (4)Lowreversecurrent:IR=1.0μA(typ

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TRS10N120HB

Marking:S10N120HB;Package:TO-247;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=30nC(typ.) (4)Lowreversecurre

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TRS12E65H

Marking:S12E65H;Package:TO-220-2L;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.2V(typ.) (3)Lowtotalcapacitivecharge:Qc=33nC(typ.) (4)Lowreversecurrent:IR=2.4μA(typ.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TRS15H120H

Marking:S15H120H;Package:TO-247-2L;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc=89nC(typ.) (4)Lowreversecurrent:IR=1.4μA(typ

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TRS15N120HB

Marking:S15N120HB;Package:TO-247;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=43nC(typ.) (4)Lowreversecurre

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

UN600N23T

Marking:S10;Package:SOT-23;N-Channel Enhancement Mode MOSFET

Feature AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices Voltagecontrolledsmallsignalswitch

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UP7534AM5-XX

Marking:S14-A-XX;Package:SOT23-5L;Current-Limited, Power Distribution Switches

GeneralDescription TheuP7534isacurrentlimitedhigh-sideswitchdesigned forapplicationswhereheavycapacitiveloadsandshortcircuitsarelikelytobemet.Thisdeviceoperateswith inputsfrom2.7Vto5.5Vforboth3Vand5Vsystems.Its lowquiescentcurrent(25uA)andstandbycurren

UPI

uPI Semiconductor Corp

UP7534AS8-XX

Marking:S14-A-XX;Package:SOP-8L;Current-Limited, Power Distribution Switches

GeneralDescription TheuP7534isacurrentlimitedhigh-sideswitchdesigned forapplicationswhereheavycapacitiveloadsandshortcircuitsarelikelytobemet.Thisdeviceoperateswith inputsfrom2.7Vto5.5Vforboth3Vand5Vsystems.Its lowquiescentcurrent(25uA)andstandbycurren

UPI

uPI Semiconductor Corp

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    S1

  • 制造商:

    Sensata-Airpax

  • 類別:

    開關(guān) > 可配置開關(guān)元件 - 觸頭塊,觸點(diǎn)塊

  • 系列:

    22.5mm Metal

  • 包裝:

    散裝

  • 電路:

    SPST-NO

  • 要求:

    開關(guān)機(jī)殼

  • 端接樣式:

    螺絲端子

  • 不同電壓時(shí)額定接觸電流:

    3A @ 120VAC

  • (先選擇,然后應(yīng)用篩選條件)兼容系列:

    Airpax,22.5 金屬

  • 描述:

    CONTACT BLOCK SPST-NO 3A

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更多S1供應(yīng)商 更新時(shí)間2025-6-23 9:52:00