SDS511Q

Marking：S1*；Package：SOD-523；Switching Diode

Features ?Ultrahighspeedswitchingapplication ?Lowforwardvoltage:VF=0.9V(Typ.) ?Fastreverserecoverytime:trr=1.6?(Typ.) ?Smalltotalcapacitance:CT=2.2?(Typ.)

SKY13317-373LF

Marking：S17；20 MHz to 6.0 GHz pHEMT GaAs SP3T Switch

Applications ?802.11a/b/g/nWLANnetworks ?FordevicesthatsupportBluetooth?signals Features ?Positivelowvoltagecontrol:0/1.8to5.0V ?Lowinsertionloss:0.5dB@2.5GHz,0.9dB@6GHz ?Highisolation:25dBupto6GHz ?Excellentlinearityperformance:P1dB=+29dBm ?

SKY13411-374LF

Marking：S11；0.1 to 6.0 GHz DPDT Switch

Applications ?Dual-bandwirelessLANs(802.11a/b/g/n) ?Diversityantennaswitching Features ?Broadbandfrequencyrange:0.1to6.0GHz ?Positivecontrolvoltagerange:1.8to5.0V ?Lowinsertionloss:0.6dBtypical@2.5GHz ?Highisolation:23.5dBtypical@2.5GHz ?P1dB:+31

SKY18108-11

Marking：S108；0.4-2.7 GHz SP9T Antenna Switch Module

Applications ?Dual-modehandsets(GSM/EDGE,Quad/TD-SCDMAorWCDMAdualmode) ?Low-cost,smallfootprintFEMs Features ?Supportsquad-bandGSMandTD-SCDMAorGSMandWCDMAdual-modefor2Gand3Gsystems ?ThreeTD/WCDMAportsaredesignedfor3Ghighpowertransmit/receiveoperation ?

SKY67107-306LF

Marking：S107；2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

Applications ?LTEcellularinfrastructureandISMbandsystems ?Ultralow-noise,highgainandhighlinearitysystems ?Digitalsatelliteradio Features ?Ultra-lowNF:0.85dB@2.6GHz ?Highgain:32dB@2.6GHz ?Lowquiescentcurrent:125mA ?Stage1and2adjustablecurrent ?

SM12

Marking：S12；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features? 350Wpeakpulsepower(8/20μs)? Protectstwouni-directionallines? Ultralowleakage:nAlevel? Operatingvoltage:12V? Lowclampingvoltage? Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Light

SM15

Marking：S15；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features 300Wpeakpulsepower(8/20μs) Protectstwouni-directionallines Ultralowleakage:nAlevel Operatingvoltage:15V Lowclampingvoltage Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Lightning)10A(

SMBT2222A

Marking：s1P；Package：SOT-23；NPN Silicon Switching Transistor

NPNSiliconSwitchingTransistor ?Lowcollector-emittersaturationvoltage ?Complementarytype: SMBT2907A/MMBT2907A(PNP) ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ101

SMBT2222A

Marking：s1P；Package：SOT-23；Low collector-emitter saturation voltage

NPNSiliconSwitchingTransistor ?Lowcollector-emittersaturationvoltage ?Complementarytype: SMBT2907A/MMBT2907A(PNP) ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ101

SMBT3904

Marking：s1A；Package：SOT-23；NPN Silicon Switching Transistor

NPNSiliconSwitchingTransistors ?HighDCcurrentgain:0.1mAto100mA ?Lowcollector-emittersaturationvoltage ?ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage ?Complementarytypes:SMBT3906...MMBT3906 ?SMBT3904S:Fororientat