首頁>IRF1010EZSTRLP>規(guī)格書詳情
IRF1010EZSTRLP中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1010EZSTRLP規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF1010EZSTRLP
- 功能描述：
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2018+ |
TO263 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
Infineon(英飛凌) |
24+ |
TO-263-3 |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IOR |
14+ |
TO263 |
1490 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-263 |
5600 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
國產(chǎn) |
詢價 | ||
IR |
24+ |
TO-263 |
60000 |
詢價 | |||
Infineon/英飛凌 |
21+ |
TO-263-2 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 |
