首頁>IRF1010EPBF>規(guī)格書詳情
IRF1010EPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1010EPBF規(guī)格書詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號:
IRF1010EPBF
- 功能描述:
MOSFET MOSFT 60V 81A 12mOhm 86.6nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA |
2000 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價,原裝元器件供應(yīng),支持開發(fā)樣品 |
詢價 | ||
INFINEON |
22+23+ |
TO-220 |
8000 |
新到現(xiàn)貨,只做原裝進口 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
NA |
9990 |
只有原裝 |
詢價 | ||
IR |
23+ |
44365 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | |||
INFINEON/英飛凌 |
24+ |
TO-220 |
88000 |
只做現(xiàn)貨 |
詢價 | ||
IR |
2020+ |
TO-220 |
9600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
24+ |
N/A |
65000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IR |
13+ |
TO-220 |
50000 |
勤思達科技主營IR系列,全新原裝正品,現(xiàn)貨供應(yīng)。 |
詢價 | ||
INFINEON/IR |
21+ |
3000 |
TO-220-3 |
詢價 | |||
IR墨西哥 |
24+ |
TO-220 |
30980 |
原裝現(xiàn)貨/放心購買 |
詢價 |