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IRF1010EZLPBF規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF1010EZLPBF
- 功能描述:
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3400 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
23+ |
TO-220 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-262 |
28000 |
原裝正品 |
詢價 | ||
IR |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
21+ |
TO-220 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
IR |
25+23+ |
TO-262 |
15573 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO220 |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
24+ |
TO-262-3 |
185 |
詢價 | |||
IR |
23+ |
TO-262-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |