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HGTG20N60C3D

Marking:G20N60C3D;Package:TO-247;45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60C3D

Marking:G20N60C3D;Package:TO-247;45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

HGTP20N60C3

Marking:G20N60C3;Package:TO-220AB;45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

IGP20N60H3

Marking:G20H603;Package:PG-TO220-3;High speed switching series third generation

HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering ?verylowturn-offenergy ?lowVCEsat ?lowEMI ?maximumjunctiontemperature175°C ?qualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating,halogen-freemouldcompound,RoH

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP20N60HS

Marking:G20N60HS;Package:PG-TO-220-3-1;High Speed IGBT in NPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: ??-parallelswitchingcapability ??-moderateEoffincreasewithtemperature ??-

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW20N60HS

Marking:G20N60HS;Package:PG-TO-247-3;High Speed IGBT in NPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: ??-parallelswitchingcapability ??-moderateEoffincreasewithtemperature ??-

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

STGF20M65DF2

Marking:G20M65DF2;Package:TO-220FP;Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features ?Highshort-circuitwithstandtime ?VCE(sat)=1.55V(typ.)@IC=20A ?Tightparameterdistribution ?Saferparalleling ?Lowthermalresistance ?Softandveryfastrecoveryantiparalleldiode Applications ?Motorcontrol ?UPS ?PFC ?General-purposeinverters Desc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP20M65DF2

Marking:G20M65DF2;Package:TO-220;Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features ?Highshort-circuitwithstandtime ?VCE(sat)=1.55V(typ.)@IC=20A ?Tightparametersdistribution ?Saferparalleling ?Lowthermalresistance ?Softandveryfastrecoveryantiparalleldiode Applications ?Motorcontrol ?UPS ?PFC ?General-purposeinverters Des

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW20IH125DF

Marking:G20IH125DF;Package:TO-247;1250 V, 20 A IH series trench gate field-stop IGBT

Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWA20HP65FB2

Marking:G20HP65FB2;Package:TO-247;Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO?247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=20A ?Co-packagedprotectiondiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?Welding ?Powerfa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    G20

  • 制造商:

    VPC

  • 制造商全稱:

    VPC

  • 功能描述:

    Protective Cover, G20, Receiver

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
XP Power
24+
N/A
12000
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WESTCODE
23+
模塊
900
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢!
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FSC
23+
TO3P
9526
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哈里斯
06+
TO-247
3500
原裝
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H
24+
TO247
3000
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VISHAY
24+/25+
343
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NVIDIA
08+
BGA
1
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INF
16+
TO-3P
10000
全新原裝現(xiàn)貨
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哈里斯
23+
TO-247
3000
全新原裝
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MNC
2016+
DIP20
8850
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更多G20供應(yīng)商 更新時(shí)間2025-6-23 15:10:00