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Marking：G20IH125DF；Package：TO-247；1250 V, 20 A IH series trench gate field-stop IGBT Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Marking：G20IH125DF；Package：TO-3P；1250 V, 20 A IH series trench gate field-stop IGBT Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
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