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2SK1658

Marking：G20；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1658isanN-channelverticaltypeMOSFETwhich canbedrivenby2.5Vpowersupply. AstheMOSFETislowGateLeakageCurrent,itissuitablefor appliancesincludingFilterCircuit. FEATURES ?DirectlydrivenbyICshavinga3Vpowe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

S1MSP1M-7

Marking：G20；Package：PowerDI123；1.0A SURFACE MOUNT STANDARD RECOVERY RECTIFIER PowerDI123

Features -GlassPassivatedDieConstruction -IdeallySuitedforAutomatedAssembly -LowProfileDesign,PackageHeightLessthan1.0mm -LowReverseLeakageCurrent -ExceptionalThermalTransferBasedonExposedHeatSinkontheUndersideoftheDevice -Lead-FreeFinish;RoHSCompliant

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

BZG03C20

Marking：G20；Package：DO-214AC；Zener Diodes

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

G2003A

Marking：G2003A；Package：SOT-23-3L；Power switching application

Description TheG2003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitchingapplication

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G2009G

Marking：G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG2009Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200N06K

Marking：G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG200N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200N10K

Marking：G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG200N10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04D3

Marking：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG200P04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04D3A

Marking：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG200P04D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04S2

Marking：G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET

Description TheG200P04S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    G20

  • 制造商：

    VPC

  • 制造商全稱：

    VPC

  • 功能描述：

    Protective Cover, G20, Receiver

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
XP Power
24+
N/A
12000
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理
 詢價(jià)
WESTCODE
23+
模塊
900
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
FSC
23+
TO3P
9526
詢價(jià)
哈里斯
06+
TO-247
3500
原裝
 詢價(jià)
H
24+
TO247
3000
詢價(jià)
VISHAY
24+/25+
343
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
NVIDIA
08+
BGA
1
詢價(jià)
INF
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
哈里斯
23+
TO-247
3000
全新原裝
 詢價(jià)
MNC
2016+
DIP20
8850
只做原裝,假一罰十,公司專營(yíng)變壓器,濾波器!
 詢價(jià)
更多G20供應(yīng)商 更新時(shí)間2025-6-23 10:27:00

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