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首頁 >STD2>規(guī)格書列表

零件型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
STD2NC40	文件：86.83 Kbytes Page：8 Pages	N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=4	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC40-1	文件：86.83 Kbytes Page：8 Pages	N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=4	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC40-1	文件：86.76 Kbytes Page：8 Pages	N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=4	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC45-1	文件：381.91 Kbytes Page：11 Pages	N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dt capabilityforthemostdemandingapplications.Suc	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC50	文件：442.61 Kbytes Page：10 Pages	N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh??I MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=3	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC50-1	文件：442.61 Kbytes Page：10 Pages	N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh??I MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=3	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC60	文件：283.31 Kbytes Page：9 Pages	N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh??I MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=3.	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC70Z	文件：447.47 Kbytes Page：10 Pages	N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH??II MOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NC70Z-1	文件：447.47 Kbytes Page：10 Pages	N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH??II MOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD2NK100Z	文件：459.31 Kbytes Page：16 Pages	N-channel 1000 V, 6.25 廓, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETsdevelopedusingtheSuperMESH?technologybySTMicroelectronics,anoptimizationofthewell-establishedPowerMESH?.Inadditiontoasignificantreductioninon-resistance,thesedevicesaredesignedtoensureah	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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技術(shù)參數(shù)

ITVM(A)：
200
IT@TC(°C)：
85
VDRM/VRRM(V)：
1800
ITSM 45°C/10ms(A)：
8000
VTO(V)：
0.95
rT(mΩ)：
1.0
dv/dt(V/μs)：
1000
TVJM(°C)：
125
RthJC per chip(K/W)：
0.14
封裝外形：
Fig. 20

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	STD210		24+		500	本站庫存	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	STD25NF10T4	ST		TO-252	5000	原裝長期供貨!	詢價(jià)
深圳市富誠威科技有限公司	STD2098L	AUK	24+	SOT-89	4897	絕對(duì)原裝!現(xiàn)貨熱賣!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	STD2NK90ZT4	ST	24+	原廠原封	6523	進(jìn)口原裝公司百分百現(xiàn)貨可出樣品	詢價(jià)
深圳市勤思達(dá)科技有限公司	STD20NE06	ST	12+	TO-252	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市昌和盛利電子有限公司	STD25N03L	ST	23+	TO-252	8795		詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	STD2NK70Z	ST	23+	TO-252	5000	原裝正品,假一罰十	詢價(jià)
深圳市弘為電子有限公司	STD2NK90ZT4	ST	24+	09+	5	原裝現(xiàn)貨假一罰十	詢價(jià)
上海專毅電子科技有限公司	STD20NF06LT4	ST	17+	TO263/	9988	只做原裝進(jìn)口,自己庫存	詢價(jià)
深圳市凌旭科技有限公司	STD20NF20	ST	2016+	TO-252	2500	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)

更多STD2供應(yīng)商更新時(shí)間2025-7-29 16:00:00

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