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STD2455PLS

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STD2555NL

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STD25N03L

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STD25N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ?Ultralowon-resistance ?100avalanchetested Applications ?Switchin

STMICROELECTRONICSSTMicroelectronics

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STD25NE03L

N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD25NF10

N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputerapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD25NF10L

N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD25NF10LA

N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET

Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicesuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersfor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD25NF10LA

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD25NF10LA

N-channel Enhancement Mode Power MOSFET

Features VDS=100V,ID=40A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STD2

  • 功能描述：

    保險(xiǎn)絲 2A 240VAC IND

  • RoHS：

    否

  • 制造商：

    Littelfuse

  • 產(chǎn)品：

    Surface Mount Fuses

  • 電流額定值：

    0.5 A

  • 電壓額定值：

    600 V

  • 保險(xiǎn)絲類型：

    Fast Acting

  • 保險(xiǎn)絲大小/組：

    Nano

  • 尺寸：

    12.1 mm L x 4.5 mm W

  • 端接類型：

    SMD/SMT

  • 系列：

    485

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
TO-252
5000
原裝長(zhǎng)期供貨!
 詢價(jià)
ST
2016+
TO-252
2500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
ST
04+
SOT252
2600
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
ST
17+
TO-252
6200
詢價(jià)
24+
500
本站庫(kù)存
 詢價(jià)
ST
24+
TO-252
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
ST
2020+
IPAK
225
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
ST
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
DISCRETE
2500
STE
2500
詢價(jià)
ST
24+
原廠原封
6523
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品
 詢價(jià)
更多STD2供應(yīng)商 更新時(shí)間2025-7-26 16:20:00

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