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PBSS4032PZ

Marking：PB4032PZ；Package：SC-73；30 V, 4.4 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrint

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安世安世半導體(中國)有限公司

PBSS4032PZ-Q

Marking：PB4032PZ；Package：SOT223；30 V, 4.4 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4032NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Optimizedswitchingtime ?Highcollectorcurrentcapab

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

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