零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking:PB4032PZ;Package:SC-73;30 V, 4.4 A PNP low VCEsat (BISS) transistor Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrint | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
Marking:PB4032PZ;Package:SOT223;30 V, 4.4 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4032NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Optimizedswitchingtime ?Highcollectorcurrentcapab | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA |
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