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P25Q10LA-UWH-KW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UXH-IR

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UXH-IT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UXH-IW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UXH-KR

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UXH-KT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UXH-KW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-WFH-IR

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-WFH-IT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-WFH-IW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

技術(shù)參數(shù)

  • Density：

    1Mb

  • Page size：

    256B

  • Max CLK：

    104MHz

  • Supply Range：

    1.65-2.0

  • Temperature：

    -40 to 85°C

  • Endurance：

    100K

  • Retention：

    20Y

  • ID page：

    O

  • UID：

    O

  • ESD(HBM)：

    4KV

  • Package：

    UDFN

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只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
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更多P25Q10L供應(yīng)商 更新時(shí)間2025-7-28 13:56:00

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