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P25Q10LA-TSH-IT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-TSH-IW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-TSH-KR

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-TSH-KT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-TSH-KW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UWH-IR

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UWH-IT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UWH-IW

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UWH-KR

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q10LA-UWH-KT

Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory Datasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

技術(shù)參數(shù)

  • Density：

    1Mb

  • Page size：

    256B

  • Max CLK：

    104MHz

  • Supply Range：

    1.65-2.0

  • Temperature：

    -40 to 85°C

  • Endurance：

    100K

  • Retention：

    20Y

  • ID page：

    O

  • UID：

    O

  • ESD(HBM)：

    4KV

  • Package：

    UDFN

供應(yīng)商型號品牌批號封裝庫存備注價格
PUYA/普冉
25+
SOP-8
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
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PURA
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50000
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15275
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89630
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24+
NA/
15050
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PURA
24+
SOP8
60000
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PURA
24+
SOP8
27950
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
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PURA
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SOP8
8850
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
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PUYA(普冉)
24+
7350
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更多P25Q10L供應(yīng)商 更新時間2025-7-28 9:01:00

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