首頁>NESG2101M16>規(guī)格書詳情
NESG2101M16中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
NESG2101M16規(guī)格書詳情
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
? Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
? High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
? 6-pin lead-less minimold (M16, 1208 PKG)
產(chǎn)品屬性
- 型號：
NESG2101M16
- 功能描述：
射頻硅鍺晶體管 RO 551-NESG2101M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 發(fā)射極 - 基極電壓
- 封裝：
Reel
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SOT-23 |
60000 |
詢價 | |||
RENESAS/瑞薩 |
24+ |
SOT-523 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
RENESAS |
23+ |
SOT-343 |
63000 |
原裝正品現(xiàn)貨 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SOT-523 |
50000 |
原裝正品 支持實單 |
詢價 | ||
NEC |
22+ |
6-PIN |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
NEC |
24+ |
NA/ |
9507 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
NEC |
24+ |
1208 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
1208 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
NEC |
23+ |
SOT-343 |
27000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
CEL |
20+ |
SOT-523 |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
