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1.0SMB20A

Marking：K20A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

TK20A60U

Marking：K20A60U；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=12S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK20A60W

Marking：K20A60W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK20A60W5

Marking：K20A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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