IRFD112中文資料GESS數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IRFD112 |
| 功能描述 | POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
| 文件大小 |
112.88 Kbytes |
| 頁面數(shù)量 |
2 頁 |
| 生產(chǎn)廠商 | GE Solid State |
| 企業(yè)簡稱 |
GESS |
| 中文名稱 | GE Solid State |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-7-21 16:42:00 |
| 人工找貨 | IRFD112價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRFD112規(guī)格書詳情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
產(chǎn)品屬性
- 型號：
IRFD112
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DIP-4 |
8238 |
詢價(jià) | |||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
DIP-4 |
68500 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
IR |
2023+ |
DIP-4 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||
IR |
01+ |
DIP-4 |
12999 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IOR |
24+ |
DIP-4 |
100 |
詢價(jià) | |||
a |
20+ |
SOP |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
MOT |
9207 |
382 |
公司優(yōu)勢庫存 熱賣中! |
詢價(jià) | |||
IR |
24+ |
DIP-4 |
90000 |
一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢價(jià) | ||
IR |
06+ |
原廠原裝 |
4483 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) |
