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IRF5210

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF5210

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF5210

P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF5210

-100V 單個(gè) P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝; \n優(yōu)勢(shì):\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開(kāi)關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF5210L

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF5210LPBF

HEXFET Power MOSFET

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

IRF5210PBF.

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF5210S

P-Ch 100V Fast Switching MOSFETs

100EASGuaranteed GreenDeviceAvailable SuperLowGateCharge ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF5210S

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF5210SPBF

HEXFET Power MOSFET

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

技術(shù)參數(shù)

  • OPN：

    IRF5210PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    -100 V

  • RDS (on) @10V max：

    60 m?

  • ID @25°C max：

    -40 A

  • QG typ @10V：

    120 nC

  • Polarity：

    P

  • VGS(th) min：

    -2 V

  • VGS(th) max：

    -4 V

  • VGS(th)：

    -3 V

  • Technology：

    IR MOSFET?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
25+
TO220
20300
INFINEON/英飛凌原裝特價(jià)IRF5210即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
 詢價(jià)
IR
23+
TO-220
3355
原廠原裝正品
 詢價(jià)
IR(國(guó)際整流器)
2023+
N/A
4550
全新原裝正品
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
24+
TO-220
48650
原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本)
 詢價(jià)
IR(國(guó)際整流器)
24+
N/A
13048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價(jià)
IR
24+
TO-220
6000
全新原裝正品，歡迎咨詢！
 詢價(jià)
IR
06+
TO-220
1000
原裝庫(kù)存
 詢價(jià)
IR
2015+
TO-220
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
24+
TO-220
10
詢價(jià)
更多IRF5210供應(yīng)商 更新時(shí)間2025-7-29 16:33:00

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