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IRF1010EPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF1010EPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010ES

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010ESPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ESPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZ

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZ

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZL

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
MATSUSHITA
24+
191
現(xiàn)貨供應
 詢價
MATSUSHITA
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
PANASONIC/松下
23+
NEW
40700
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
600
普通
 詢價
LEM
2024+
SENSOR
271
原廠直銷,支持實單,保質期5年
 詢價
LEM
18+
MODULE
280
進口原裝支持實單
 詢價
LEM/萊姆
24+
SENSOR
8600
正品原裝,正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
 詢價
LEM/萊姆
24+
IGBT
60000
全新原裝現(xiàn)貨
 詢價
LEM
18+
Sensors
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
LEM
SENSOR
22+
6000
十年配單,只做原裝
 詢價
更多HO-P-1010供應商 更新時間2025-6-26 16:33:00

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