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2SC2223

Marking:F12;Package:SOT-23;NPN-General use transistor

NPN-Generalusetransistor225mW50m20V Qualitylevelandexecutivestandard ◆“G”level QZJ840611Q/FRQZJ123-2007 ◆theⅡlevelofnationalstandard GB4589.1-89GB/T12560-1999Q/FR124-2007 Applications:Canbeusedforswitchingandamplifyingin variousele

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

DTB123E

Marking:F12;DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

羅姆羅姆半導(dǎo)體集團

DTB123ECHZG

Marking:F12;Package:SOT-23;500mA/-50V Digital transistor (with built-in resistor)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

DTB123EKFRA

Marking:F12;Package:SOT-346;-500mA/-50V Digital transistor (with built-in resistors)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

MBRXF120

Marking:F12;Package:SOD-123F;Schottky Barrier Rectifiers

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

MIC2005-1.2YML-TR

Marking:F12;Package:DFN;Fixed and Adjustable Current Limiting Power Distribution Switches

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

FSA1208BQX

Marking:F1208;Package:MLP;Low-Power, Eight-Port, High-Speed Isolation Switch

Description TheFSA1208isalow-power,eight-port,high-speedswitch.Thispartisconfiguredasasingle-pole,singlethrowswitchandisoptimizedforisolatingahighspeedsource,suchasaDDRmemorybus.TheFSA1208featuresanextremelylowoncapacitance(CON)of6pFSuperiorchanne

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RFP12N10L

Marking:F12N10L;Package:TO-220AB;12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F12N60

Marking:F12N60;Package:TO-220F;12A 600V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

F12N60

Marking:F12N60;Package:TO-220F;12A 600V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    F12

  • 制造商:

    Kaise

  • 功能描述:

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
XP Power
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N/A
12000
一級代理保證進口原裝正品假一罰十價格合理
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SOT23-3
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2558
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5000
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2014+
1206
86000
全新原裝現(xiàn)貨
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LF(TEC)
09+
FUSE
65000
絕對全新原裝強調(diào)只做全新原裝現(xiàn)
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MIC
23+
SOT23-3
11923
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TI
25+
QFP
3000
強調(diào)現(xiàn)貨,隨時查詢!
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MOSPEC/華晶
2015+
TO220
19898
專業(yè)代理原裝現(xiàn)貨,特價熱賣!
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ACER
24+
QFP
1068
原裝現(xiàn)貨假一罰十
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更多F12供應(yīng)商 更新時間2025-6-23 15:10:00