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4.0SMF26A

Marking:CE;Package:SOD-123;3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101requirement

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

6.0SMAJ26CA

Marking:CE;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

74AHCT1G08GW

Marking:CE;Package:SC-74A;2-input AND gate

1.Generaldescription The74AHC1G08;74AHCT1G08isasingle2-inputANDgate.Inputsareovervoltagetolerant.This featureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. 2.Featuresandbenefits ?Widesupplyvoltagerangefrom2.0to5.5V ?Overvoltagetoler

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

74AHCT1G08GW

Marking:CE;Package:SOT-353;2-input AND gate

DESCRIPTION The74AHC1G/AHCT1G08isahigh-speedSi-gateCMOSdevice. The74AHC1G/AHCT1G08providesthe2-inputANDfunction. FEATURES ?Symmetricaloutputimpedance ?Highnoiseimmunity ?ESDprotection: –HBMEIA/JESD22-A114-Aexceeds2000V –MMEIA/JESD22-A115-Aexce

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

74AHCT1G08GW

Marking:CE;Package:SOT-353;2-input AND gate

DESCRIPTION The74AHC1G/AHCT1G08isahigh-speedSi-gateCMOSdevice. The74AHC1G/AHCT1G08providesthe2-inputANDfunction. FEATURES ?Symmetricaloutputimpedance ?Highnoiseimmunity ?ESDprotection: –HBMEIA/JESD22-A114-Aexceeds2000V –MMEIA/JESD22-A115-Aexce

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

74AHCT1G08GW-Q100

Marking:CE;Package:TSSOP5;2-input AND gate

1.Generaldescription The74AHC1G08-Q100;74AHCT1G08-Q100isasingle2-inputANDgate.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)standa

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

ADL5506ACBZ-R7

Marking:CE;Package:WLCSP;30 MHz to 4.5 GHz, 45 dB RF Detector

FEATURES ?CompleteRFdetectorfunction ?Typicaldynamicrange:45dB(±1.0dB) ?Frequencyrangefrom30MHzto4.5GHz ?Excellenttemperaturestability ?Stablelinearindecibelresponse ?Poweron/offresponsetime:65ns/145ns(rise/fall) ??5dBminputpowerapplied ?Operatesfr

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AP2121AJ4A-1.8TRG1

Marking:CE;Package:CSP-4;HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical(f=1kHz) ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

DIODESDiodes Incorporated

美臺半導(dǎo)體

BC54-10PAS

Marking:CE;Package:DFN2020D-3;45V/60V/80V, 1A NPN medium power transistors

Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC54-10PAS

Marking:CE;Package:DFN2020D-3;45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits ?Highcollectorcurrentcapa

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細參數(shù)

  • 型號:

    CE

  • 制造商:

    DDK

  • 制造商全稱:

    DDK Ltd.

  • 功能描述:

    Waterproof Connectors with Crimp Contacts Comptatible with JIS-B-6015

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更多CE供應(yīng)商 更新時間2025-6-14 10:31:00