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PCDE0865G1

Marking:CDE0865G1;Package:TO-263;Silicon Carbide Schottky Barrier Diode

Features ?TemperatureIndependentSwitchingBehavior ?HighSurgeCurrentCapability ?PositiveTemperatureCoefficientonVF ?LowConductionLoss ?ZeroReverseRecovery ?Highjunctiontemperature175oC ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC612

PANJITPan Jit International Inc.

強茂強茂股份有限公司

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