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UPC8119T-E3

Marking：C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ?Recommendedoperatingfrequency:f=100MHzto1.92GHz ?Supplyvoltage:VCC=2.7to3.3V ?Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V ?Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) ?Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC8120T-E3

Marking：C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ?Recommendedoperatingfrequency:f=100MHzto1.92GHz ?Supplyvoltage:VCC=2.7to3.3V ?Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V ?Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) ?Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

C2M0025120D

Marking：C2M0025120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitances ?EasytoParallelandSimpletoDrive ?AvalancheRuggedness ?ResistanttoLatch-Up ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?I

WOLFSPEED

WOLFSPEED, INC.

C2M0040120D

Marking：C2M0040120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitances ?EasytoParallelandSimpletoDrive ?ResistanttoLatch-Up ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?IncreasedPowerDensity

WOLFSPEED

WOLFSPEED, INC.

C2M0045170D

Marking：C2M0045170D；Package：TO-247-3L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features ?2ndgenerationSiCMOSFETtechnology ?HighblockingvoltagewithlowOn-Resistance ?Highspeedswitchingwithlowcapacitances ?Resistanttolatch-up ?HalogenFree,RoHSCompliant Benefits ?Highersystemefficiency ?Reducedcoolingrequirements ?Increasedpowerdensity

WOLFSPEED

WOLFSPEED, INC.

C2M0045170P

Marking：C2M0045170P；Package：TO-247-4L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features ?2ndgenerationSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?8mmofcreepagedistancebetweendrainandsource ?HighblockingvoltagewithlowOn-Resistance ?Highspeedswitchingwithlowcapacitances ?Resistanttolatch-up ?HalogenFree,RoHSCo

WOLFSPEED

WOLFSPEED, INC.

C2M1000170D

Marking：C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ?HighSpeedSwitchingwithLowCapacitances ?HighBlockingVoltagewithLowRDS(on) ?EasytoParallelandSimpletoDrive ?Ultra-lowDrain-gatecapacitance ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?IncreasedSystemSwitchingFrequency ?ReducedCool

WOLFSPEED

WOLFSPEED, INC.

C2M0045170P

Marking：C2M0045170P；Package：TO-247-4；Silicon Carbide Power MOSFET C2M MOSFET Technology

CreeCree, Inc

科銳

C2M0080170P

Marking：C2M0080170P；Package：TO-247-4；Silicon Carbide Power MOSFET C2M MOSFET Technology

CreeCree, Inc

科銳

詳細參數(shù)

  • 型號：

    C2M

  • 功能描述：

    MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
24+
2
詢價
CREE全系列可接受訂貨
23+
CREE全系列可接受訂貨
9808
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨
 詢價
CREE
24+
TO-247
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
L-COM
新
7
全新原裝 貨期兩周
 詢價
CREE
25+23+
TO247
66515
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
RFP
24+
TO-57
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CREE
1926+
IGBT
585
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
CTC
24+
297
現(xiàn)貨供應
 詢價
CREE/科銳
20+
原裝
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
CREE
24+
TO-247
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多C2M供應商 更新時間2025-6-24 16:30:00

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