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2SC1815

Marking:C1815;Package:TO-92;Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications ?Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) ?ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC1815

Marking:C1815;Package:TO-92;Silicon NPN Epitaxial Type (PCT process)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications ?Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) ?ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC1815

Marking:C1815;Package:TO-92;Audio Frequency General Purpose Amplifier Applications

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications ?Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) ?ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC1815

Marking:C1815;Package:TO-92;TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications ?Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) ?ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC1815

Marking:C1815;Package:TO-92;Audio Frequency General Purpose Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC1815

Marking:C1815;Package:TO-92;Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

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