| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMG2305UXQ GeneralFeatures VDS=-20VID=-4.9A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description TheIRLML2244usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID=-4.9A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description TheNTR3A30PZusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID=-4.9A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyPMV27UPEA GeneralFeatures VDS=-20VID=-4.9A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=-20V,ID=-4.1A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description TheSi2323CDSusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID=-4.9A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；P-Channel Enhancement Mode Power MOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5sHB；P-Channel Enhancement Mode Power MOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；Package：SOT23-3L；P-Channel Enhancement Mode MOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH |
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