| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMP2123LQ GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyIRLML6402 GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS Features TrenchFETPowerMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. ThePMV48XPAusesadvancedtrenchtechnology GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；P-Channel 20-V(D-S) MOSFET FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
Marking：A1SHB；Package：SOT-23；MOSFET FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET Description TheSQ2301ESusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID =-2.3A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Marking：A1SHB；Package：SOT-23；P-Channel MOSFET FEATURES TrenchFETPowerMOSFET | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
Marking：A1SHB；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 愛德微愛德微(深圳)電子有限公司 | ADV | ||
Marking：A1SHB；Package：SOT-23；P-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER |
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