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2N7002T

SmallSignalMOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON). ●Voltagecontrolledsmallsignalswitch. ●Ruggedandreliable. ●Highsaturationcurrentcapability.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002T

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002T

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

東電電子東京電子有限公司

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美臺半導(dǎo)體

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. ?DC-DCConverters ?Powermanagementfunctions ?Battery

DIODESDiodes Incorporated

美臺半導(dǎo)體

2N7002T

300mAmps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002T

N-ChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002T

N-ChannelPlastic-EncapsulateTransistor

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?LowON-ResistanceandlowInputCapacitance ?LowGateThresholdVoltage ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?AvailableinLead

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002T

SmallSignalMOSFETTransistor

FEATURES ●Lowon-resistance. ●Lowgatethresholdvoltge. ●Lowinputcapacitance. ●Fastswitchingspeed. ●Lowinput/outputleakage. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes3and4)

DIODESDiodes Incorporated

美臺半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    2N7002PV

  • 功能描述：

    MOSFET MOSFET N-CH DUAL 60V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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2021+
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9000
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2024
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更多2N7002PV供應(yīng)商 更新時間2025-6-16 23:00:00

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