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2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?Low

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

2N7002E

N-Channel60V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

2N7002E

SmallSignalMOSFETSingleN??hannel,60V,310mA,2.5Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N7002EPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere CONSTRUCTION *N-ChannelEnhancement MARKING *702E FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2N7002EQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi

DIODESDiodes Incorporated

美臺半導體

2N7002ESEPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT500mAmpere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapabilit

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2N7002ESPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.300Ampere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput MARKING *PK1 FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturation

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2N7002F

TrenchMOSLogicLevelFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Veryfastswitching ■Surface-mountedpackage ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

2N7002-G

MOSFET

MOSFET(N-Channel) RoHSDevice Features Powerdissipation:0.35W

COMCHIPComchip Technology

典琦典琦科技股份有限公司

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23+
SOT363
30000
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JIT
23+
SOT-363
50000
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23+
SOT363
4920
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JIT
24+
SOT363
10000
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JIT
24+
NA/
8170
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JIT
24+
SOT363
990000
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PANJIT
23+
SOT363
1243
全新原裝正品現(xiàn)貨,支持訂貨
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PANJIT
20+
SOT363
1243
進口原裝現(xiàn)貨,假一賠十
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JIT
24+
SOT-363
60000
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PANJIT
21+
SOT363
1243
原裝現(xiàn)貨假一賠十
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更多2N7002DWG供應商 更新時間2025-6-23 17:18:00