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2N7002E

絲印：-2E；Package：SOT-23；N-channel TrenchMOS FET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

2N7002E

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci

DIODESDiodes Incorporated

美臺半導(dǎo)體

2N7002E

絲印：7E**；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002E

N-Channel Enhanceent Mode Field Effect Transistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2N7002E

Super high dense cell design for low RDS (ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

2N7002E

N-CHANNEL ENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ?LowOn-Resistance ?FastSwitchingSpeed ?Low-voltagedrive ?Easilydesigneddrivecircuits ?Pb-FreePackageisavailable. ?Canprotectagainststaticelectricity1KVwhen theproductisinuse. ?AEC-Q101Pass

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

2N7002E

N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?Low

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

2N7002E

Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E

絲?。?a target="_blank" title="Marking" href="/703/marking.html">703*；Package：SOT-23；Small Signal MOSFET 60 V, 310 mA, Single, N??hannel, SOT??3

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E

N-CHANNEL ENHANCEMENT-MODE MOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    2N7002E

  • 制造商：

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個

  • 包裝：

    管件

  • 描述：

    N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
24+
標(biāo)準(zhǔn)封裝
100048
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
 詢價
恩XP
25+
S0T-23
32000
NXP/恩智浦全新特價2N7002E即刻詢購立享優(yōu)惠#長期有貨
 詢價
恩XP
16+
SOT-23
9500
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
恩XP
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
恩XP
2021+
SOT23
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
恩XP
2024
SOT-23
58209
16余年資質(zhì) 絕對原盒原盤代理渠道 更多數(shù)量
 詢價
恩XP
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
Slkor/薩科微
24+
SOT-23
50000
Slkor/薩科微一級代理,價格優(yōu)勢
 詢價
恩XP
24+
N/A
7051
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同
 詢價
恩XP
17+
SOT
6200
100%原裝正品現(xiàn)貨
 詢價
更多2N7002E供應(yīng)商 更新時間2025-7-29 23:00:00

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