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2N7002DW-HF

MOSFET

Features -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

2N7002DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002DWKX

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?SmallSurfaceMountPackage ?ESDProtectedupto2kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(No

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002DWL

DualN-ChannelMOSFET

Features ?HighDensityCellDesignForLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?EpoxyMeetsUL94V-0FlammabilityRating ?MoistureSensitivityLevel1 ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002DWQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002DWS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002DW-TP

N-ChannelMOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Ruggedandreliable ?Voltagecontrolledsmallsignalswitch ?OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多2N7002CK供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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