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BZT52B2V7S

Marking：1Z；Package：SOD-323；Surface Mount Zener Diodes

Features ◇Widezenervoltagerangeselection:2.4Vto75V. ◇VZToleranceselectionof±2(Bseries). ◇Ideallysuitedforautomatedassemblyprocesses. ◇Moisturesensitivitylevel1. Applications ◇Zenerdiode. ◇Ultra-smallsurfacemountpackage.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZX58550-C5V6

Marking：1Z；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤300mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BZX58550-C5V6-Q

Marking：1Z；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤300mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

MM3Z8V2

Marking：1Z；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.200mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

MMBT6517LT1

Marking：1Z；Package：SOT-23；High Voltage Transistor(NPN Silicon)

HighVoltageTransistor NPNSilicon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PBSS5480X

Marking：1Z；Package：SC-62；80 V, 4 A PNP low VCEsat (BISS) transistor

FEATURES ?HighhFEandlowVCEsatathighcurrentoperation ?HighcollectorcurrentIC:4A ?Highefficiencyleadingtolessheatgeneration. APPLICATIONS ?Mediumpowerperipheraldrivers(e.g.fansandmotors) ?Strobeflashunitsfordigitalstillcamerasandmobilephones ?Inverterappl

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMDPB55XP

Marking：1Z；Package：SOT1118；20 V, dual P-channel Trench MOSFET

1.1Generaldescription DualP-channelenhancementmodeField-EffectTransistor(FET)inasmallandleadless ultrathinDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits ?Veryfastswitching ?TrenchMOSFETtechnology

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

MM3Z2V7B

Marking：1Z；Package：SOD-323FL；Zener Diodes

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

AAT3663IWO-8.4-2-T1

Marking：1ZXYY；Package：TDFN33-14；1A Linear Li-Ion Battery Charger for Single and Dual Cell Applications

Features ?4.0V~13.2VInputVoltageRange ?CompatiblewithUSBorACAdapterSources ?ProgrammableFastChargeCurrentfrom100mAto1A ?ProgrammableChargeTerminationCurrent ?DigitalThermalLoopChargeReduction ?LessThan0.4μABatteryLeakageCurrent ?ProgrammingChargeTimer

SKYWORKSSkyworks Solutions Inc.

思佳訊美國(guó)思佳訊公司

ADTA114EUAQ-13

Marking：1Z1；Package：SOT323；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -Built-InBiasingResistors -SurfaceMountPackageSuitedforAutomatedAssembly -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3) -QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    1Z

  • 功能描述：

    信號(hào)調(diào)節(jié) 88-108MHz 400 Watt IL .25dB Iso 23dB

  • RoHS：

    否

  • 制造商：

    EPCOS

  • 產(chǎn)品：

    Duplexers

  • 頻率：

    782 MHz, 751 MHz

  • 阻抗：

    50 Ohms

  • 端接類(lèi)型：

    SMD/SMT

  • 封裝/箱體：

    2.5 mm x 2 mm

  • 工作溫度范圍：

    - 30 C to + 85 C

  • 封裝：

    Reel

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NEC
24+
5000
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33248
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二極管
30000
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24+
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5500
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更多1Z供應(yīng)商 更新時(shí)間2025-6-10 16:30:00

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