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NTMFWS1D5N08XT1G

Marking：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features ?LowQRR,SoftRecoveryBodyDiode ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,Halogen?Free/BFR?FreeandareRoHSCompliant Applications ?SynchronousRectification(SR)inDC?DCandAC?DC ?Primary

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVMFWS1D5N08XT1G

Marking：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features ?LowQRR,SoftRecoveryBodyDiode ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AECQualifiedandPPAPCapable ?TheseDevicesarePb?Free,Halogen?Free/BFR?FreeandareRoHSCompliant Applications ?SynchronousRectification(

ONSEMION Semiconductor

安森美半導體安森美半導體公司

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