NTMFS1D3N04XMT1G

Marking：1D3N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?SmallFootprint(5x6mm)withCompactDesign ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant Applications ?MotorDrive ?BatteryProtection ?ORing

NTMFWS1D5N08XT1G

Marking：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features ?LowQRR,SoftRecoveryBodyDiode ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,Halogen?Free/BFR?FreeandareRoHSCompliant Applications ?SynchronousRectification(SR)inDC?DCandAC?DC ?Primary

NTTFS1D4N04XMTAG

Marking：1D4N4；Package：WDFN8；MOSFET - Power, Single N-Channel, STD Gate, 8FL 40 V, 1.43 m, 178 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?SmallFootprint(3.3x3.3mm)forCompactDesign ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant Applications ?MotorDrive ?BatteryProtection ?SynchronousRec

NTTFSS1D1N02P1E

Marking：1D1N2；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 25 V, 0.85 m, 264 A

Features ?AdvancedSource?DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction ?UltraLowRDS(on)toImproveSystemEfficiency ?LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant Typ

NTTFSSCH1D3N04XL

Marking：1D3；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features ?ExcellentThermalConductionbyAdvancedSource?DownCenter GateDual?CoolingPackageTechnology(3.3x3.3mm) ?LowRDS(on)toMinimizeConductionLoss ?LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike ?LowQGandCapacitancetoMinimizeDrivingandSwitchingLos

NTTFSSH1D3N04XL

Marking：1D3N04；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features ?AdvancedSource?DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction ?LowRDS(on)toMinimizeConductionLoss ?LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike ?LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses ?TheseDevicesar

NVBLS1D5N10MCTXG

Marking：1D5N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 m, 300 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?LowersSwitchingNoise/EMI ?TheseDevicesarePb?FreeandareRoHSCompliant

NVBLS1D7N08H

Marking：1D7N08H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?LowersSwitchingNoise/EMI ?TheseDevicesarePb?FreeandareRoHSCompliant

NVBLS1D7N10MCTXG

Marking：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?LowersSwitchingNoise/EMI ?TheseDevicesarePb?FreeandareRoHSCompliant

NVMFWS1D1N04XMT1G

Marking：1D1N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?SmallFootprint(5x6mm)withCompactDesign ?AECQ101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant Applications ?MotorDrive ?B