| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking：10P6F6；Package：DPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：10P6F6；Package：TO-220FP；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：10P6F6；Package：TO-220；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：10P6F6；Package：IPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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