PESD12VS1ULD-Q

Marking：1010；Package：DFN1006D-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PMEG4010EPK

Marking：1010；Package：SOD1608；40 V, 1 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaleadlessultrasmallSOD1608 (DFN1608D-2)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside

PBSS5160QA

Marking：101010；Package：DFN1010D-3；60 V, 1 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4160QA. 2.Featuresandbenefits ?Verylowcollector-

PDTA143EQA

Marking：101011；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■reducedpickandplacecosts

PDTA143EQA

Marking：101011；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?built-inbiasresistors ?simplifiescircuitdesign ?reducescomponentcount ?reducedpickandplacecosts ?lowpackageheightof0.37mm ?AEC-Q101qualified ?suitableforAutomaticOpticalInspection (AOI)ofsolderjoint

PDTA143EQA

Marking：101011；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

1.1Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1

PDTC143EQA

Marking：101001；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

PHPT61010NY

Marking：1010NAB；Package：SOT669；100 V, 10 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. PNPcomplement:PHPT61010PY 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrinted

PHPT61010NY-Q

Marking：1010NAB；Package：SOT669；100 V, 10 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT61010PY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin

PHPT61010PY

Marking：1010PAB；Package：SOT669；100 V, 10 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. NPNcomplement:PHPT61010NY. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?Re