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IPB06N03LA

Marking:06N03LA;Package:TO-263-3;OptiMOS 2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI06N03LA

Marking:06N03LA;Package:TO-263-3;OptiMOS 2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP06N03LA

Marking:06N03LA;Package:TO-220-3-1;OptiMOS 2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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