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ESDR0502NMUTBG-TP

Marking：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ?Ultalowcapacitance03pFtypical(10010) ?Ultralowleakage:nAlevel| Lowoperatingvoltage:5V ?Complieswithfollowingstandards: ?~IEC61000-4-2(ESD)immunitytest| Airdischarge:￡20kV Contactdischarge:+15kV ?—IEC61000-4-5(Lightning)35A(8/20us) ?RoHS

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

RCLAMP0502N

Marking：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ?Ultralowcapacitance:0.3pFtypical(1Oto10) ?Ultralowleakage:nAlevel ?Lowoperatingvoltage:5 ?Complieswithfollowingstandards: ?—[EC61000-4-2(ESD)immunitytest Airdischarge:+￡20kV Contactdischarge:￡15kV oe—IEC61000-4-5(Lightning)3.5A(8/20ps) ?RoHSCo

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

RCLAMP0582N

Marking：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ?Ultralowcapacitance-0.3pFtypical(I0to10) ?Ultralowleakage:nAlevel ?Lowoperatingvoltage:5V ?Complieswithfollowingstandards: ?—IEC61000-4-2(ESD)immunitytest Airdischarge:￡20kV Contactdischarge:+15kV/ ?—IEC61000-4-5(Lightning)35A(8/20us) ?RoHSCom

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

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