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PESD5V0V1BLD

Marking：0111；Package：SOD882D；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewi

NEXPERIANexperia B.V. All rights reserved

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PESD5V0V1BLD-Q

Marking：0111；Package：DFN1006D-2；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4230QA

Marking：011100；Package：DFN1010D-3；30 V, 2 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5230QA. 2.Featuresandbenefits ?Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ZQA

Marking：011110；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ZQA

Marking：011110；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD113ZQA

Marking：011111；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD114EQA

Marking：011101；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD114EQA

Marking：011101；Package：SOT1215；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTD113ZQA

Marking：011111；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    0111

  • 制造商：

    SWANN-MORTON

  • 功能描述：

    SWANN MORTON BLADE 24 PK5 F.HANDLE 4+6A

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SOP24W
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原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
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全新原裝正品,本司專業(yè)配單,大單小單都配
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BEI Sensors
2022+
1
全新原裝 貨期兩周
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LITTELFUSE/力特
22+
DIP
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
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更多0111供應(yīng)商 更新時(shí)間2025-6-9 17:48:00

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