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PBSS5230QA

Marking:000010;Package:DFN1010D-3;30 V, 2 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4230QA. 2.Featuresandbenefits ?Verylowcollector-

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PDTA114EMB

Marking:00011001;Package:SOT883B;PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC114EMB Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiastransistors ■

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PDTA114TMB

Marking:00011110;Package:SOT883B;PNP resistor-equipped transistor; R1 = 10 k廓, R2 = open

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC114TMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA114YMB

Marking:00011111;Package:SOT883B;PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC114YMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA123EMB

Marking:00100010;Package:SOT883B;PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC123EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA124EMB

Marking:00100101;Package:DFN1006B-3;PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC124EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA124XMB

Marking:00011000;Package:DFN1006B-3;PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC124XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA143EMB

Marking:00100111;Package:DFN1006B-3;PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA143TMB

Marking:00101000;Package:DFN1006B-3;PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143TMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA143XMB

Marking:00101001;Package:DFN1006B-3;PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick

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產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    00

  • 制造商:

    Excelta Corporation

  • 類別:

    工具 > 鑷子

  • 包裝:

  • 描述:

    TWEEZERS - 3 STAR STRAIGHT STRON

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更多00供應(yīng)商 更新時(shí)間2025-6-19 14:22:00