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YAE10N4BOX

Insulated Copper Terminal, 3/8 Stud, 1.39 in L, .54 in W, Tin Plated, 300 Volts Max.

HUBBELL

HUBBELL INCORPORATED

CEB10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF10N4

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEI10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEI10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP10N4

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
BURNDY
新
68
全新原裝 貨期兩周
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24+
SMD
7500
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
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24+
45
本站現(xiàn)庫存
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Burndy
2012
467
公司優(yōu)勢庫存 熱賣中!!
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25+
DIP
880000
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24+
N/A
72000
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更多YAE10N4BOX供應(yīng)商 更新時間2025-6-21 16:06:00

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