XL1000

20.0-40.0 GHz GaAs MMIC Low Noise Amplifier

GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithograph

XL1000

20.0-40.0 GHz GaAs MMIC Low Noise Amplifier; ?Self Bias Architecture\n?Small Size\n?3.0 or 5.0 V Operation\n?20.0 dB Small Signal Gain\n?2.0 dB Noise Figure\n?+9.0 dBm P1dB Compression Point\n?100% On-Wafer RF, DC and Noise Figure Testing\n?100% Visual Inspection to MIL-STD-883 Method 2010?;

General Description\nMimix Broadband’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

XL1000-BD

Low Noise Amplifier; ·Self Bias Architecture\n·RoHS* Compliant\n·100% Visual Inspection to MIL-STD-883 Method 2010\n·100% On-Wafer RF, DC and Noise Figure Testing\n·+9.0 dBm P1dB Compression Point\n·2.0 dB Noise Figure\n·20.0 dB Small Signal Gain\n·3.0 or 5.0 V Operation\n·Small Size\n·260°C Reflow Compatible\n;

MACOM's three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

XL1000-BD

20.0-40.0 GHz GaAs MMIC Low Noise Amplifier

GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoens

XL1000-BD-000V

20.0-40.0 GHz GaAs MMIC Low Noise Amplifier

GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoens

XL1000-BD-EV1

20.0-40.0 GHz GaAs MMIC Low Noise Amplifier

GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoens

XL1000-BD

20.0-40.0 GHz GaAs MMIC

XL1000-BD

Low Noise Amplifier

XL1000-BD_10

20.0-40.0 GHz GaAs MMIC

XL1000-BD_15

Low Noise Amplifier