UPC2708T

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION TheUPC2708TandUPC2711TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,and

UPC2708T

BIPOLAR ANALOG INTEGRATED CIRCUIT; ? Supply voltage : VCC= 4.5 to 5.5 V\n? Circuit current : ICC= 22 mA TYP. @VCC= 5.0 V\n? Power gain : GP= 33 dB TYP.@ f = 500 MHz\n? Medium output power : PO(sat)= +13.5 dBm TYP.@ f = 500 MHz\n? Upper limit operating frequency : fu= 1.0 GHz TYP.@ 3 dB bandwidth\n? Port impedance : input/output 50 ?\n? High-density surface mounting : 6-pin super minimold package (2.0 ×1.25 ×0.9 mm)\n\nAPPLICATION\n? PA driver for 900 MHz band cellular telephone;

DESCRIPTION\nThe μPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.\nThis IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.\n\nFEATURES\n? Supply voltage : VCC= 4.5 to 5.5 V\n? Circuit current : ICC= 22 mA TYP. @VCC= 5.0 V\n? Power gain : GP= 33 dB TYP.@ f = 500 MHz\n? Medium output power : PO(sat)= +13.5 dBm TYP.@ f = 500 MHz\n? Upper limit operating frequency : fu= 1.0 GHz TYP.@ 3 dB bandwidth\n? Port impedance : input/output 50 ?\n? High-density surface mounting : 6-pin super minimold package (2.0 ×1.25 ×0.9 mm)\n\nAPPLICATION\n? PA driver for 900 MHz band cellular telephone

UPC2708TB

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION TheμPC2708TBisasiliconmonolithicintegratedcircuitdesignedasbufferamplifierforBS/CStuners.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. TheμPC2708TBhascompatiblepinconnectionsandperformancetoμPC2708Tofconventional

UPC2708TB

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ?High-densitysurfacemounting:6-pinsuperminimoldpackage(2.0′1.25′0.9mm) ?Widebandresponse:fu=2.9GHzTYP.@3dBbandwidth ?Mediumoutputpower:PO(sat)=+10dBmTYP.@f=1GHzwithexternalinductor ?Supplyvoltage:VCC=4.5to5.5V ?Powergain:GP=15

UPC2708TB-E3

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION TheμPC2708TBisasiliconmonolithicintegratedcircuitdesignedasbufferamplifierforBS/CStuners.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. TheμPC2708TBhascompatiblepinconnectionsandperformancetoμPC2708Tofconventional

UPC2708TB-E3

絲?。?a target="_blank" title="Marking" href="/c1d/marking.html">C1D；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ?High-densitysurfacemounting:6-pinsuperminimoldpackage(2.0′1.25′0.9mm) ?Widebandresponse:fu=2.9GHzTYP.@3dBbandwidth ?Mediumoutputpower:PO(sat)=+10dBmTYP.@f=1GHzwithexternalinductor ?Supplyvoltage:VCC=4.5to5.5V ?Powergain:GP=15

UPC2708T-E3

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION TheUPC2708TandUPC2711TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,and

UPC2708TB

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER;

UPC2708TB

BIPOLAR ANALOG INTEGRATED CIRCUIT

UPC2708TB

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER