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UPA801T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T

NPN SILICON HIGH FREQUENCY

CEL

California Eastern Labs

UPA801T

isc Silicon NPN RF Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

UPA801T

NONLINEAR MODEL

CEL

California Eastern Labs

UPA801TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T_09

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    UPA801T

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    NPN SILICON HIGH FREQUENCY TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
SOT-363/SOT-323-6
8600
新進庫存/原裝
 詢價
NEC
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
16+
SOT-363
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
NEC
24+
SOT-363
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
23+
SOT-363
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
NEC
25+23+
SOT-363
43427
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
NEC
2022
SOT-363 / SOT-323-6
8600
全新原裝現(xiàn)貨熱賣
 詢價
NEC
24+
NA/
52250
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
NEC
22+
SOT-363
25000
只有原裝原裝,支持BOM配單
 詢價
更多UPA801T供應(yīng)商 更新時間2025-6-22 16:00:00

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