首頁>UPA2350BT1P-E4-A>規(guī)格書詳情
UPA2350BT1P-E4-A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
UPA2350BT1P-E4-A |
| 功能描述 | MOS FIELD EFFECT TRANSISTOR |
| 文件大小 |
440.86 Kbytes |
| 頁面數(shù)量 |
9 頁 |
| 生產(chǎn)廠商 | Renesas Technology Corp |
| 企業(yè)簡(jiǎn)稱 |
RENESAS【瑞薩】 |
| 中文名稱 | 瑞薩科技有限公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-6-24 18:08:00 |
| 人工找貨 | UPA2350BT1P-E4-A價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
UPA2350BT1P-E4-A規(guī)格書詳情
DESCRIPTION
The μ PA2350BT1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
FEATURES
? Monolithic Dual MOSFET
Connecting the Drains on the circuit board is not required
because the Drains of the FET1 and the FET2 are internally
connected.
? 2.5 V drive available and low on-state resistance
RSS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)
RSS(on)2 = 37 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)
RSS(on)3 = 44 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)
RSS(on)4 = 55 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)
? Built-in G-S protection diode against ESD
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
24+ |
NA/ |
8200 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
24+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
RENESAS/瑞薩 |
22+ |
BGA-4 |
20000 |
深圳原裝現(xiàn)貨正品有單價(jià)格可談 |
詢價(jià) | ||
NEC |
19+ |
BGA |
20000 |
5000 |
詢價(jià) | ||
NEC |
23+ |
BGA |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價(jià) | ||
NEC |
23+ |
BGA4 |
12500 |
一級(jí)代理,原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
NEC |
2017+ |
BGA4 |
6528 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
RENESAS |
24+ |
BGA |
16900 |
原裝正品現(xiàn)貨支持實(shí)單 |
詢價(jià) | ||
NEC |
23+ |
BGA |
9280 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
NEC |
09PB |
BGA4 |
3030 |
原裝現(xiàn)貨 |
詢價(jià) |
