首頁(yè) >TSC2039>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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EvaluatingtheADL8142GaAs,pHEMT,MMIC,LowNoiseAmplifier,23GHzto31GHz GENERALDESCRIPTION TheADL8142-EVALZconsistsofa4-layerprintedcircuitboard (PCB)fabricatedfrom8milthick,Rogers4003CandIsola370HR, copperclad,forminganominalthicknessof62mils.TheRFINand RFOUTportsontheADL8142-EVALZarepopulatedwith 2.92mm,femalecoaxialconn | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
Magnetron | CPICommunications & Power Industries, Inc. Cpi | CPI | ||
TRANSIENTVOLTAGESUPPRESSOR | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
TRANSIENTVOLTAGESUPPRESSOR | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
ChipZenerDiode | FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司 | FORMOSA | ||
SOT2380voltPNPsiliconplanarmediumpower Description Thistransistorcombineshighgain,highcurrentoperationandlowsaturationvoltagemakingitidealforpowerMOSFETgatedrivingandlowlosspowerswitching. Features ■Lowsaturationvoltageforreducedpowerdissipation ■1to2amphighcurrentcapability ■Pb-free ■SOT2 | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
SOT2380voltPNPsiliconplanarmediumpowertransistor Description Thistransistorcombineshighgain,highcurrentoperationandlowsaturationvoltagemakingitidealforpowerMOSFETgatedrivingandlowlosspowerswitching. Features ■Lowsaturationvoltageforreducedpowerdissipation ■1to2amphighcurrentcapability ■Pb-free ■SOT2 | Zetex Zetex Semiconductors | Zetex | ||
SOT2380voltPNPsiliconplanarmediumpowertransistor Description Thistransistorcombineshighgain,highcurrentoperationandlowsaturationvoltagemakingitidealforpowerMOSFETgatedrivingandlowlosspowerswitching. Features ■Lowsaturationvoltageforreducedpowerdissipation ■1to2amphighcurrentcapability ■Pb-free ■SOT2 | Zetex Zetex Semiconductors | Zetex | ||
SOT2380voltPNPsiliconplanarmediumpower Description Thistransistorcombineshighgain,highcurrentoperationandlowsaturationvoltagemakingitidealforpowerMOSFETgatedrivingandlowlosspowerswitching. Features ■Lowsaturationvoltageforreducedpowerdissipation ■1to2amphighcurrentcapability ■Pb-free ■SOT2 | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
SOT2380voltPNPsiliconplanarmediumpower Description Thistransistorcombineshighgain,highcurrentoperationandlowsaturationvoltagemakingitidealforpowerMOSFETgatedrivingandlowlosspowerswitching. Features ■Lowsaturationvoltageforreducedpowerdissipation ■1to2amphighcurrentcapability ■Pb-free ■SOT2 | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES |
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