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TPH6R004PL

MOSFETsSiliconN-channelMOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9nC(typ.) (3)Smalloutputcharge:Qoss=20nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=4.8mΩ(typ.)(VGS=10V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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